Ytterbium-doped InP light-emitting diode at 1.0 μm
- 1 May 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (9) , 870-872
- https://doi.org/10.1063/1.95869
Abstract
Light-emitting pn junction diodes have been realized in ytterbium-doped InP. The p-type epitaxial layers, which contained the dopant ytterbium (Yb), were grown by liquid phase epitaxy on (100) oriented n+-type InP substrates. Ohmic contacts were alloyed, and the diodes biased in forward direction. At 77 K, emissions were observed at 1.38 eV (0.90 μm) and 1.24 eV (1.00 μm) due to near band-edge electron hole recombination and transitions between the spin-orbit levels 2F5/2→2F7/2 of Yb3+(4f13), respectively. The dependence of the electroluminescence intensity with applied voltage is presented. The external quantum efficiency was determined to be 8×10−4 at 77 K.Keywords
This publication has 7 references indexed in Scilit:
- Luminescence of the rare-earth ion ytterbium in InP, GaP, and GaAsJournal of Applied Physics, 1985
- Photoluminescence excitation spectroscopy on InP: YbPhysical Review B, 1984
- Photoluminescence identification of the C and Be acceptor levels in InPJournal of Electronic Materials, 1984
- 1.54-μm luminescence of erbium-implanted III-V semiconductors and siliconApplied Physics Letters, 1983
- Rare earth activated luminescence in InP, GaP and GaAsJournal of Crystal Growth, 1983
- Avalanche breakdown voltages for III-V semiconductorsApplied Physics Letters, 1978
- Liquid Phase Epitaxy of InPJournal of the Electrochemical Society, 1974