Low-noise millimeter-wave mixer diodes prepared by molecular beam epitaxy (MBE)
- 1 August 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (3) , 219-221
- https://doi.org/10.1063/1.89613
Abstract
Schottky barrier diodes which are specifically designed for use in cryogenically cooled millimeter‐wave mixers have been fabricated from MBE layers grown on heavily doped GaAs substrates. At 15 K the devices show a nearly exponential current‐voltage characteristic and a diode noise temperature which is determined predominantly by the tunneling transport mechanism. A diode noise temperature as low as 55 K was achieved under pumped conditions. This is the lowest diode noise temperature ever obtained in a resistive mixer. A single sideband mixer noise temperature of 315 K was measured at 102 GHz for a cryogenic mixer employing these diodes.Keywords
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