Electronic consequences of ideal local order in amorphous Si
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 101-104
- https://doi.org/10.1016/0022-3093(83)90535-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Localized states and the electronic properties of a hydrogenated defect in amorphous siliconPhysical Review B, 1983
- A Semi-empirical tight-binding theory of the electronic structure of semiconductors†Journal of Physics and Chemistry of Solids, 1983
- Order and disorder in amorphous, tetrahedrally coordinated semiconductors A curved-space descriptionPhilosophical Magazine Part B, 1982
- Quantum well model of hydrogenated amorphous siliconSolid State Communications, 1980
- Topology of covalent non-crystalline solids I: Short-range order in chalcogenide alloysJournal of Non-Crystalline Solids, 1979