Preparation of Cr-Doped TiO2 Thin Film of P-type Conduction for Gas Sensor Application
- 1 September 2002
- journal article
- research article
- Published by Oxford University Press (OUP) in Chemistry Letters
- Vol. 31 (9) , 892-893
- https://doi.org/10.1246/cl.2002.892
Abstract
Titanium dioxide (TiO2) could be doped with as much as 8.7 atom% Cr by means of a sol-gel method. XRD analysis revealed that the powder of Cr (8.7 atom%)-doped TiO2 calcined at 500 °C consisted of small crystallites ascribale to anatase structure. The thin film of doped TiO2 (70 μm) at this composition was found to behave as a p-type semiconductor on exposure to CO and NO2 in air: it responded to dilute NO2 with a sharp decrease in electrical resistance.Keywords
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