Grain boundary amorphization reaction in thin films of elemental Cu and Y
- 27 February 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (9) , 795-797
- https://doi.org/10.1063/1.100849
Abstract
Compositionally modulated thin films of Cu and Y were prepared in an ultrahigh vacuum dc ion beam deposition chamber. Room-temperature growth of an amorphous Cu-Y phase was observed with interdiffusion of the elemental Cu and Y. Transmission electron microscopy of as-prepared samples revealed a novel growth morphology; amorphous phase formation was observed both at the original Cu/Y interface and between the grains of the elemental Y. Estimates for the thermodynamic and kinetic factors underlying the grain boundary amorphization reaction are presented.Keywords
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