Molecular-Beam Epitaxy of AlGaMnAs
- 1 January 1999
- journal article
- Published by The Magnetics Society of Japan in Journal of the Magnetics Society of Japan
- Vol. 23 (1_2) , 93-95
- https://doi.org/10.3379/jmsjmag.23.93
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- (GaMn)As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxyJournal of Crystal Growth, 1997
- Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAsJournal of Crystal Growth, 1997
- (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAsApplied Physics Letters, 1996
- Real-time scanning microprobe reflection high-energy electron diffraction observations of the cleaning process of GaAs substratesJournal of Crystal Growth, 1995
- New III-V diluted magnetic semiconductors (invited)Journal of Applied Physics, 1991
- Diluted magnetic III-V semiconductorsPhysical Review Letters, 1989