Distinguishing dissociated glide and shuffle set dislocations by high resolution electron microscopy

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Abstract
High resolution electron lattice images of an end-on, dissociated 60° dislocation in silicon have been used to determine the type (shuffle or glide) of dislocation present. Characteristic features of the 30° partial core image which depend on detail beyond the instrumental point resolution have been used together with computer-simulated dynamical electron images. The use of defect symmetry is proposed as a method of resolving the black-white contrast ambiguity between tunnels and atoms.