A New Etching Solution System, H 3 PO 4 ‐ H 2 O 2 ‐ H 2 O , for GaAs and Its Kinetics
- 1 September 1978
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 125 (9) , 1510-1514
- https://doi.org/10.1149/1.2131705