Nonuniform wall motion in magnetic stripe domains and its effect on vertical Bloch line propagation
- 15 April 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (8) , 3168-3170
- https://doi.org/10.1063/1.340877
Abstract
Nonuniform transient motion of magnetic stripe domain walls was observed in bubble garnet material. A number of films with 2–8 μm stripe width were used for investigation. The nonuniformity of motion varies from place to place on a submicron scale in the ‘‘perfect’’ single-crystal garnet film. Observing the development through a time sequence shows that the nonuniform motion begins within the first wall width of displacement. The degree of the nonuniformity increases as the effective drive field decreases. This nonuniform wall motion is due to the existence of local fluctuations of wall coercivity within the garnet crystal film. The response of the stripe domain wall due to dc bias field variation shows behavior similar to Barkhausen jumps indicating the intrinsic nonuniformity of the garnet material. The nonuniform wall motion may seriously affect the reliability of the propagation of vertical Bloch lines (VBLs) in a VBL memory.This publication has 5 references indexed in Scilit:
- Operation of a VBL memory read/write gateIEEE Transactions on Magnetics, 1986
- Operation of a VBL memory write gateIEEE Transactions on Magnetics, 1985
- Observation of vertical Bloch line propagationJournal of Applied Physics, 1985
- A new-ultra-density solid state memory: Bloch line memoryIEEE Transactions on Magnetics, 1983
- Transient bubble domain configuration in garnet materials observed using high speed photographyIEEE Transactions on Magnetics, 1975