Deterioration-Induced Slow Trap in GaAs Esaki Diodes
- 1 December 1963
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 2 (12) , 809-811
- https://doi.org/10.1143/jjap.2.809
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Excess Tunnel Current in Silicon Esaki JunctionsPhysical Review B, 1961