Transient pulse response of In0.2Ga0.8As/GaAs microcavity lasers

Abstract
We investigate the transient emission of two In0.2Ga0.8As/GaAs microcavity laser samples with one and three quantum wells at 20 K following femtosecond optical excitation. The stimulated emission time is faster when the cavity resonance is tuned to shorter wavelengths within the gain spectrum of the quantum well. A larger number of quantum wells makes the dynamical response faster also. The narrowest pulse width observed is 6.8 ps, and the shortest rise time is 1 ps.

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