Transient pulse response of In0.2Ga0.8As/GaAs microcavity lasers
- 27 March 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (13) , 1599-1601
- https://doi.org/10.1063/1.113864
Abstract
We investigate the transient emission of two In0.2Ga0.8As/GaAs microcavity laser samples with one and three quantum wells at 20 K following femtosecond optical excitation. The stimulated emission time is faster when the cavity resonance is tuned to shorter wavelengths within the gain spectrum of the quantum well. A larger number of quantum wells makes the dynamical response faster also. The narrowest pulse width observed is 6.8 ps, and the shortest rise time is 1 ps.Keywords
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