Plasma anodisation of Ga _{1−
x} In _x As ( x =0.35 and 0.10) and study of MOS interface properties

18 February 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (4) , 156-157
https://doi.org/10.1049/el:19820107

Abstract

Oxides have been grown on n-type Ga_1−xIn_xAs/GaAs wafers (x=0.35 and 0.10) using plasma anodisation. According to C/V measurements, the surface can be biased into inversion and probably accumulation on Ga_0.65In_0.35As. The interface trap density is about 10¹² cm⁻²eV⁻¹ near midgap, and about 10¹³ cm⁻²eV⁻¹ near flatband. MOS capacitors on Ga_0.90In_0.10As exhibit a high density of interface States 0.4–0.5 eV below the conduction band.

Keywords

ACCUMULATION
INVERSION
MOS INTERFACE PROPERTIES
MOS CAPACITORS
PLASMA ANODISATION
C/V MEASUREMENTS
GA1-XINXAS
INTERFACE TRAP DENSITY
SEMICONDUCTOR
INTERFACE STATES

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Plasma anodisation of Ga 1− x In x As ( x =0.35 and 0.10) and study of MOS interface properties

Abstract

Keywords

Plasma anodisation of Ga _{1−
x} In _x As ( x =0.35 and 0.10) and study of MOS interface properties