Temperature dependence of 1.98 eV photoluminescence band in Cd1-xMnxTe semiconductor alloys
- 1 July 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 39 (2) , 367-369
- https://doi.org/10.1016/0038-1098(81)90692-x
Abstract
No abstract availableFunding Information
- National Science Foundation (DMR77-23798)
This publication has 6 references indexed in Scilit:
- Paramagnetic—spin-glass—antiferromagnetic phase transitions infrom specific heat and magnetic susceptibility measurementsPhysical Review B, 1980
- Acceptor photoionization and light‐to‐heavy hole absorption in Cd1−xMnxTePhysica Status Solidi (b), 1979
- Fundamental absorption edge of Cd1‐x Mnx Te mixed crystalsPhysica Status Solidi (b), 1977
- The optical electrical and magnetic properties of the europium chalcogenides and the rare earth pnictidesC R C Critical Reviews in Solid State Sciences, 1972
- Exchange Splitting of the Ground State of Ions in Antiferromagnetic Mn, KMn, and RbMnPhysical Review Letters, 1966
- Zero-Phonon Lines and Phonon Coupling in ZnS:MnPhysical Review B, 1965