High-speed low-power circuits fabricated using a submicron NMOS technology

1 December 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 6 (12) , 662-664
https://doi.org/10.1109/EDL.1985.26266

Abstract

We present results on very high-speed low-power devices and circuits fabricated using a NMOS technology scaled to submicron dimensions. These results illustrate the electrical behavior of single minimum-size devices, and present the performance of several submicron circuits, such as ring oscillators, a 3-GHz divide-by-two counter and a 90- MHz 16 × 16 multiplier.

Keywords

MOS DEVICES
POWER SUPPLIES
IMPLANTS
POWER DISSIPATION
DEGRADATION
THRESHOLD VOLTAGE
RING OSCILLATORS
COUNTING CIRCUITS
HOT CARRIERS
POWER GENERATION