Simple method for evaluating electronic properties at silicon—sapphire interface

31 July 1980

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 16 (16) , 617-618
https://doi.org/10.1049/el:19800428

Abstract

Electric characteristics of metal-sapphire-silicon transistors are presented. The insulator of the devices is obtained by thinning to 50–100 μm the sapphire substrate of s.o.s. m.o.s. transistors. Devices allow the determination of electronic mobility μ_n = 40 cm² V⁻¹ s⁻¹, in the inversion layer of the Si-sapphire interface.

Keywords

SOS MOS TRANSISTORS
ELECTRONIC PROPERTIES
ELECTRONIC MOBILITY
SI SAPPHIRE INTERFACE
INVERSION LAYER