Energy of free and bound excitons in GaAs in a magnetic field
- 1 June 1973
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 12 (11) , 1217-1220
- https://doi.org/10.1016/0038-1098(73)90146-4
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Resolved Free-Exciton Transitions in the Optical-Absorption Spectrum of GaAsPhysical Review B, 1972
- Ground and first excited states of excitons in a magnetic fieldIl Nuovo Cimento B (1971-1996), 1972
- Nonhydrogenic Exciton and Energy Gap of GaAsPhysical Review Letters, 1972
- Energy Levels of Direct Excitons in Semiconductors with Degenerate BandsPhysical Review B, 1971
- Identification of exciton-neutral donor complexes in the photoluminescence of high purity GaAsSolid State Communications, 1970
- Bound exciton luminescence in epitaxial Sn-doped gallium-arsenideJournal of Luminescence, 1970
- Lifetimes of Bound Excitons in CdSPhysical Review B, 1970
- Shallow donor levels of InSb in a magnetic fieldJournal of Physics and Chemistry of Solids, 1968
- Observation of Exciton Fine Structure in the Interband Magnetoabsorption of InSb and GermaniumPhysical Review Letters, 1967
- Impurity and Exciton Effects on the Infrared Absorption Edges of III-V CompoundsPhysical Review B, 1965