Preparation of SrAl2O4:Eu Phosphor Thin Films by Intense Pulsed Ion-Beam Evaporation
- 1 February 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (2S) , 1035-1037
- https://doi.org/10.1143/jjap.40.1035
Abstract
SrAl2O4 activated with Eu phosphors has been known to exhibit high brightness and long-lasting phosphorescence without radioactive materials. In this paper, SrAl2O4:Eu thin films have been successfully deposited on Si(100) or graphite substrates using an intense pulsed ion-beam evaporation technique. The results of X-ray diffraction and photoluminescence suggest that SrAl2O4:Eu thin films which have a polycrystalline structure can be produced in vacuum, without substrate heating and annealing. The composition and morphology of the films have been analyzed by Rutherford backscattering spectroscopy (RBS) and scanning electron microscopy (SEM). From RBS analysis, we have obtained good stoichiometry between the target and the films prepared.Keywords
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