Defect states at silicon surfaces
- 15 December 1999
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 273-274, 468-472
- https://doi.org/10.1016/s0921-4526(99)00527-x
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Etch-pit initiation by dissolved oxygen on terraces of H-Si(111)Applied Physics Letters, 1997