Space charge and oscillation effects in gold-doped silicon p-‘i’-n diodes
- 31 August 1967
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 10 (8) , 823-832
- https://doi.org/10.1016/0038-1101(67)90165-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- SPACE-CHARGE RECOMBINATION OSCILLATIONS IN SILICONApplied Physics Letters, 1967
- Gold as a recombination centre in siliconSolid-State Electronics, 1965
- OSCILLATIONS IN SEMICONDUCTORS DUE TO DEEP LEVELSApplied Physics Letters, 1963
- Volume-Controlled, Two-Carrier Currents in Solids: The Injected Plasma CasePhysical Review B, 1961
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960
- Properties of Gold-Doped SiliconPhysical Review B, 1957