Junction properties of homoepitaxial diamond films grown by step–flow mode
- 1 December 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (11) , 6095-6099
- https://doi.org/10.1063/1.368922
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Diamond films epitaxially grown by step-flow modeJournal of Crystal Growth, 1998
- Enhancement/Depletion Surface Channel Field Effect Transistors of Diamond and Their Logic CircuitsJapanese Journal of Applied Physics, 1997
- Stepped growth and etching of (001) diamondDiamond and Related Materials, 1996
- Homoepitaxial diamond films with large terracesApplied Physics Letters, 1996
- Diamond devices and electrical propertiesDiamond and Related Materials, 1995
- High Quality Homoepitaxial Diamond Films Grown in End-Launch Type ReactorsMRS Proceedings, 1995
- Diamond(001) single-domain 2×1 surface grown by chemical vapor depositionApplied Physics Letters, 1994
- Atomic force microscopy of (100), (110), and (111) homoepitaxial diamond filmsJournal of Applied Physics, 1992
- Epitaxial Growth of High Quality Diamond Film by the Microwave Plasma-Assisted Chemical-Vapor-Deposition MethodJapanese Journal of Applied Physics, 1990
- Epitaxial growth of diamond on diamond substrate by plasma assisted CVDApplied Surface Science, 1988