Relation between silicon-hydrogen complexes and microvoids in amorphous silicon films from IR absorption

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Abstract
A line shape analysis was made of IR absorption bands observed by reflection mode measurements to 400 cm−1 on hydrogenated amorphous silicon a‐Si:H films. Individual Gaussian absorption lines were resolved through a least‐squares deconvolution of multiple stretch mode bands. Emphasis is made on the structural and optical trends toward low‐temperature deposited films, with their relaxed open a‐Si network containing microvoids. The vibrational behaviors of Si‐H, Si‐H2 and Si‐H3 complexes were studied over a wide range of deposition temperatures TD = 350 °C to −121 °C. Systematic vibrational frequency shifts were resolved for all complexes due to a shift in bond angle distortion with TD. Frequency shifts and line broadening effects identified the Si‐H3 complex as distinct in behavior within microvoids from Si‐H and Si‐H2. In the limit of low TD, the observed frequencies approached closely those of representative substituted silane molecules establishing the identification of Si‐Hn complexes and their corresponding structural relation to the bond angle distortion model.

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