AlGaAs/GaAs 2-DEG FET's fabricated from MO-CVD Wafers
- 1 March 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 6 (3) , 154-156
- https://doi.org/10.1109/EDL.1985.26078
Abstract
A transconductance (gm) of as high as 330 mS/mm is obtained from wafers grown by MO-CVD in which triethyl gallium and triethyl aluminum are used as organometallic compounds. A comparison between the experimental and theoretical results is made for the dependence of gmon the thickness of the AlGaAs layer. The saturation of velocity of 2-DEG determined from the drain I-V characteristics is found to be as high as 2 × 107cm/s regardless of the absence of the undoped spacer layer.Keywords
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