Electrical and recombination characteristics of Ge-GaAs and SixGe1−x-GaAs heterojunctions
- 16 May 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 59 (1) , 395-400
- https://doi.org/10.1002/pssa.2210590152
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- GaAs Schottky-barrier avalanche diodesSolid-State Electronics, 1970
- Depletion-Layer Photoeffects in SemiconductorsPhysical Review B, 1959