Formation of Buried Oxide in Silicon by High-Dose Oxygen Implantation, and Application of this Technology to CMOS Devices
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Simox technology and its application to CMOS LSISJournal of Electronic Materials, 1983
- The Top Silicon Layer of SOI Formed by Oxygen Ion ImplantationIEEE Transactions on Nuclear Science, 1983
- Multiple SOI Structure Fabricate by High Dose Oxygen Implantation and Epitaxial GrowthJapanese Journal of Applied Physics, 1981
- Characteristics of MOSFETs fabricated in silicon-on-insulator material formed by high-dose oxygen ion implantationElectronics Letters, 1981
- Redistribution of Cr in Capless-Annealed GaAs under Arsenic PressureJapanese Journal of Applied Physics, 1980
- High Speed C-MOS IC Using Buried SiO2 Layers Formed by Ion ImplantationJapanese Journal of Applied Physics, 1980
- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978
- Crystallographic study of semi-insulating polycrystalline silicon (SIPOS) doped with oxygen atomsJournal of Applied Physics, 1978
- Thin SiO2 films formed by oxygen ion implantation in silicon: Electron microscope investigations of the Si-SiO2 interface structures and their c-v characteristicsThin Solid Films, 1976
- Formation of SiO2 Films by Oxygen-Ion BombardmentJapanese Journal of Applied Physics, 1966