Measurement of the anisotropy ratio during current-induced step bunching
- 1 August 1995
- journal article
- Published by Elsevier in Surface Science
- Vol. 336 (1-2) , L746-L752
- https://doi.org/10.1016/0039-6028(95)00551-x
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Current-Induced Faceting of Crystal SurfacesPhysical Review Letters, 1994
- Step motions on high-temperature vicinal surfacesJournal of Physics: Condensed Matter, 1994
- High atom density in the ‘‘1×1’’ phase and origin of the metastable reconstructions on Si(111)Physical Review Letters, 1994
- Dynamics of Step Bunching Induced by DC Resistive Heating of Si WaferJapanese Journal of Applied Physics, 1994
- Dynamics of step flow in a model of heteroepitaxyPhysical Review B, 1992
- Kinetic smoothing and roughening of a step with surface diffusionPhysical Review Letters, 1992
- DC-Resistive-Heating-Induced Step Bunching on Vicinal Si (111)Japanese Journal of Applied Physics, 1990
- Initial stages of silicon homoepitaxy studied by in situ reflection electron microscopyPhysica Status Solidi (a), 1989
- Electromigration in metalsReports on Progress in Physics, 1989
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951