Computer simulation of line edge profiles undergoing ion bombardment

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Abstract
A computer model of dry etching was used to predict line edge profiles obtained by the ion etching device built in our Institute. For the simulation, the etch rates as a function of impact angle data for gold, silicon, and chromium, resists AZ 1350 and PMMA were determined. These characteristics were approximated by means of analytical functions. It has been found that the accuracy of the etch rate versus impact angle is of great importance. The influence of this dependence on the predicted contour evolution has been investigated for the case of a gold hemisphere approximated by two-dimensional semicircular profile. The model was compared with known analytical results. The experimental verification of the model has been made on patterns developed in AZ 1350 on silicon, AZ 1350 on Al, and PMMA on Au. SEM observations of the evolution of edges under ion milling show good agreement between the experimentally obtained pattern profile and computer predictions.

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