Pressure-dependent transition in the mechanism of remote plasma SiNx deposition

Publisher Website
Google Scholar
Abstract
Optical emission properties in remote plasma deposition of SiNx from an N2 electron cyclotron resonance microwave plasma and SiH4 have been investigated over a pressure range of 0.002–0.3 Torr. The deposition process divides into three pressure regions. For p≳0.1 Torr, film deposition results from gas phase reactions between active nitrogen and SiH4. For p4 travels back to the plasma and deposition results from radical species created in the N2/SiH4 mixture. At intermediate pressures deposition was negligible because neither process could substantially break down SiH4.