Test structure and simplified distribution model for identification of base resistance components in self-aligned polysilicon base electrode bipolar transistors
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- An intrinsic base resistance model for low and high currentsIEEE Transactions on Electron Devices, 1990
- Base spreading resistance of square-emitter transistors and its dependence on current crowdingIEEE Transactions on Electron Devices, 1989
- Base spreading resistance of polysilicon self-aligned bipolar transistorsIEEE Transactions on Electron Devices, 1989
- The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometriesIEEE Transactions on Electron Devices, 1964