On the Behavior of Mobile Ions in Dielectric Layers of MOS Structures
- 1 August 1976
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 123 (8) , 1207-1212
- https://doi.org/10.1149/1.2133037
Abstract
Equilibrium and nonequilibrium behavior of mobile charges in dielectric layers of MOS structures have been investigated. A variety of MOS structures has been studied using the TVS method, and a newly developed technique of quasi‐continuous registration of the C‐V characteristic shifts (ACVS method). Basic models are considered, and an image force trapping model is proposed to interpret the measurement results.Keywords
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