Evidence for new optical transitions in short-period Si/Ge superlattices from electron-beam electroreflectance measurements
- 1 August 1990
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 1286, 320-329
- https://doi.org/10.1117/12.20861
Abstract
An electroreflectance study of several short-period Si/Ge superlattices and SiGe alloy layers grown by molecular beam epitaxy has been performed. Contactless Electron Beam Electroreflectance (EBER) measurements taken at 120K provide clear evidence of superlattice transitions. Comparisons between EBER spectra from sequentially stripped samples reveal superlattice transitions accompanied by those related to the substrate material and buffer layers. Results from the EBER measurements are compared with predictions from empirical pseudopotential calculations. The experimental features support the theoretical predictions.Keywords
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