Interface excitons in type-two quantum structures

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Abstract
A calculation of exciton binding energies and oscillator strengths in type- II quantum structures is presented which takes into account Coulomb correlation in the growth direction, finite barrier heights, and image charge effects. Numerical results are given for excitons in InAlAs/InP superlattices and in AlAs/GaAs quantum wells. Compared with the direct exciton in type-I quantum wells, binding energies and oscillator strengths are reduced in type-II structures, but less than naively expected

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