GaAs W-band impatt diodes for very low-noise oscillators

18 January 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (2) , 109-110
https://doi.org/10.1049/el:19900075

Abstract

W-band single-drift flat-profile impatt diodes were fabricated from GaAs MBE material and tested in a full-height waveguide resonant cavity with resonant cap. A quasi-optical parabolic Fabry–Perot resonator was used to determine the FM noise of the GaAs impatt oscillator. With a minimum noise measure of 20 dB at power levels around 20 mW, impatt diode oscillators can compete well with oscillators using Gunn devices. The (N/C)_FM = − 82dBc measured at 100 kHz frequency off-carrier and datQ_ex = 95 is comparable to the value obtained from Gunn devices. The maximum available output power of 270 mW, however, markedly exceeds that of Gunn oscillators.

Keywords

W-BAND
RESONANT CAP
LOW-NOISE OSCILLATORS
III-V SEMICONDUCTORS
IMPATT DIODES
PARABOLIC FABRY-PEROT RESONATOR
SOLID STATE MICROWAVE DEVICES
FULL-HEIGHT WAVEGUIDE RESONANT CAVITY
SINGLE-DRIFT
FLAT-PROFILE
GAAS
270 MW
FM NOISE
QUASIOPTICAL RESONATOR
MBE MATERIAL

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