Composite silicide gate electrodes—Interconnections for VLSI device technologies
- 1 August 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (8) , 1417-1424
- https://doi.org/10.1109/t-ed.1980.20050
Abstract
A potentially severe limit on density, performance, and wirability of polysilicon-gate technologies for VLSI applications, is the high resistivity of polycrystalline silicon. Composite structures of highly conductive molybdenum or tungsten disilicide on top of polysilicon (polycide) are shown to be a viable alternative gate electrode and interconnect level. Sheet resistance values of 1-3 Ω/□ for an integrated structure are easily attainable. IGFET devices fabricated to channel lengths of ≥ 1.4 µm show the polycide devices to be indistinguishable from normal polysilicon gate devices.Keywords
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