A proposed TlGaAs/AlGaAs pseudomorphic heterostructure field effect transistor
- 1 March 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (5) , 2599-2603
- https://doi.org/10.1063/1.367021
Abstract
A new heterostructure field effect transistor is proposed consisting of a pseudomorphic TlGaAs channel combined with an AlGaAs charge supply layer, the whole structure grown on a GaAs substrate. The properties of TlGaAs from previously published calculations and some simple scaling rules for the effective mass, mobility, and conduction band separation are predicted. The expected charge density in a realistic channel is calculated self-consistently and the expected critical thickness is discussed. The results suggest that a marked improvement in device performance can be expected over similar structures containing InGaAs.This publication has 14 references indexed in Scilit:
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