Composition and electronic properties of electrochemically deposited CdTe films

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Abstract
The composition, type of semiconductivity, and resistivity of CdTe films deposited electrochemically from an aqueous solution of pH=1.4 containing 1 M CdSO4 and 1 mM TeO2 were investigated. X-ray diffraction peaks confirmed the formation of CdTe in the films deposited at potentials between −0.20 and −0.65 V (vs Ag/AgCl). The films deposited at potentials more positive than −0.35 V contained free Te in addition to CdTe. X-ray measurements showed that the more positive the deposition potential, the higher the concentration of free Te in the film. Auger electron spectroscopy measurements also confirmed that the Te/Cd ratio was higher in the films deposited at more positive potentials. The films deposited at potentials more positive than −0.35 V were p type and those deposited at more negative potentials were n type. The relation between the deposition potential and sheet resistance was ‘‘volcano’’ like and it seemed that the films deposited around −0.35 V where the semiconductivity of the films changed showed maximum resistivity.

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