Population Inversion Induced by Resonant States in Semiconductors

Preprint

25 November 1998

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9811358

Abstract

We present a theoretical prediction of a new mechanism for carrier population inversion in semiconductors under an applied electric field. The mechanism is originated from a coherent capture-emission type inelastic scattering of resonant states. We support our theory with concrete calculations for shallow acceptor resonant states in strained p-Ge where a lasing in THz frequency region has been recently observed.

Keywords

POPULATION INVERSION
INVERSION INDUCED
CAPTURE EMISSION
RESONANT STATES
SEMICONDUCTORS
ELECTRIC FIELD
THZ FREQUENCY
SCATTERING

All Related Versions

Version 1, 1998-11-25, ArXiv
Published version: Physical Review Letters, 83 (3), 644.

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