Direct Determination of Sizes of Excitations from Optical Measurements on Ion-Implanted GaAs
- 28 June 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 48 (26) , 1863-1866
- https://doi.org/10.1103/physrevlett.48.1863
Abstract
Using a simple model that describes the decrease of the amplitudes of optical structures in ion-implanted crystals, projected areas of several valence and core excitons in GaAs are determined. The last remnant of crystal-related optical structure vanishes for crystallite areas less than .
Keywords
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