New approach to the manufacture of low-threshold 1.5 μm distributed feedback lasers

26 May 1983

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 19 (11) , 423-424
https://doi.org/10.1049/el:19830290

Abstract

Low-threshold-current (85 mA), oxide isolated InGaAsP/InP distributed feedback (DFB) lasers operating at a wavelength of λ = 1.5 μm have been produced for the first time using electron-beam-written DFB corrugations overgrown by MOCVD. The control and flexibility afforded by these techniques considerably ease the complexity of DFB laser manufacture.

Keywords

1.5 MICRON WAVELENGTH
MOCVD
DFB LASER MANUFACTURE
INGAASP/INP
CORRUGATIONS
SEMICONDUCTOR LASER
III-V SEMICONDUCTORS
OXIDE ISOLATED
ELECTRON BEAM LITHOGRAPHY
DISTRIBUTED FEEDBACK LASERS
HETEROJUNCTION DEVICE

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