Modeling and Analysis of the Silicon Epitaxial Growth with SiHCl3 in a Horizontal Rapid Thermal Chemical Vapor Deposition Reactor
- 1 September 1997
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 144 (9) , 3256-3261
- https://doi.org/10.1149/1.1837993
Abstract
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