Temperature-dependent efficiency calculations for a thin-film selective emitter

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Abstract
Given the degree of current interest in thin‐film thermophotovoltaic (TPV) devices, a realistic detailed estimate of the efficiency of these devices is of great importance. In this paper we describe computer calculations of the efficiency of a rare‐earth garnet selective emitter, based on the theoretical development of Chubb et al., who describe emitter efficiencies calculated assuming a constant temperature across the emitter thickness. It is known from experiment, however, that in many cases of interest the temperature is not constant. We have therefore extended this earlier work by computing numerically the emitter efficiency when the temperature is not uniform across the emitter thickness. We have restricted our attention to temperature profiles that are linear across the emitter thickness. This assumption is based on earlier simplified iterative computations of the temperature profile using a simplified source term, though these results are suggestive rather than definitive. Computed results for emitter efficiency and emitted power density will be presented as functions of substrate temperature, emitter thickness, and temperature gradient across the emitter.

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