Optical gain in GaN epilayers
- 13 July 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (2) , 199-201
- https://doi.org/10.1063/1.121754
Abstract
We present optical gain and loss spectra measured over a range of carrier densities at low temperature in hexagonal GaN epilayers. We have determined the optical loss directly to be ∼80 cm−1. Photoluminescence spectra show that stimulated emission in our samples arises from electron–hole plasma recombination.Keywords
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