The field-effect transistor — An old device with new promise
- 1 March 1964
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Spectrum
- Vol. 1 (3) , 182-192
- https://doi.org/10.1109/mspec.1964.6500644
Abstract
Fabrication by evaporation, insulated-gate construction, and predictable performance are contributing to the emergence from obscurity of the unipolar field-effect transistorKeywords
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