Accurate measurement of MBE substrate temperature
Open Access
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 131-135
- https://doi.org/10.1016/0022-0248(91)90960-d
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Molecular beam epitaxy of gallium arsenide using direct radiative substrate heatingJournal of Vacuum Science & Technology B, 1986
- The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaPJournal of the Electrochemical Society, 1975