Détermination théorique des durées de vie des niveaux 3s3p3 dans la séquence isoélectronique de Si I
- 1 May 1974
- Vol. 74 (1) , 205-213
- https://doi.org/10.1016/0031-8914(74)90194-3
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Cancellation effects in computed lifetimes of 3s3pn levels for third-row atoms and ionsNuclear Instruments and Methods, 1973
- Lifetime Measurements in Ar ii–Ar viiiJournal of the Optical Society of America, 1972
- Resonance Transition Probabilities for Third-Row Atoms and Ions (Mgi, Siii-iii, Pii, Piv, Sii-iii, Cliii) Including the Important Correlation EffectsPhysical Review Letters, 1972
- Energy Levels and Mean Lives of Cl ii–Cl vii*Journal of the Optical Society of America, 1971
- Argon Spectrum between 500 and 1000 Å Produced by Beam-Foil ExcitationJournal of the Optical Society of America, 1971
- Lifetimes of Excited Levels in PI-PVPhysica Scripta, 1971
- Beam-Foil Spectrum of Sulfur 600–4000 ÅJournal of the Optical Society of America, 1970
- Messung der Oszillatorenstärken von SiI-, SiII-und SiIII-Linien im Wellenlangenbereich 1100 — 2600 Å und Vergleich des Vakuum-UV-Strahlungsnormals mit dem KohlebogenZeitschrift für Naturforschung A, 1969
- Atomic Oscillator Strengths-I: Neutral SiliconMonthly Notices of the Royal Astronomical Society, 1968
- Radiative Lifetimes of Ultraviolet Multiplets in Si, p, s, o, NE ii, and AR IIThe Astrophysical Journal, 1966