Leakage currents, surface current and 1/ f noise in planar bipolar transistors
- 10 December 1970
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 6 (25) , 825-826
- https://doi.org/10.1049/el:19700569
Abstract
Using arguments based on the d.c. equivalent circuit of a planar bipolar transistor, it is shown that the ratio ICEO/ICBO is a measure of the significance of surface recombination current. Measurements of 1/f noise and ICEO/ICBO for a variety of transistors provide new evidence that the 1/f noise is due to the surface recombination current.Keywords
This publication has 0 references indexed in Scilit: