Influence of ion implantation on electrical properties of amorphous Ge and Si
- 16 July 1975
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 30 (1) , 231-240
- https://doi.org/10.1002/pssa.2210300124
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- High-Resolution Electron Microscope Observation of Voids in Amorphous GePhysical Review Letters, 1971
- Determination of Surface States at Clean, Cleaved Silicon Surfaces from PhotoconductivityPhysical Review Letters, 1971
- Influence of annealing on the optical properties of amorphous germanium filmsMaterials Research Bulletin, 1971
- Structural, Optical, and Electrical Properties of Amorphous Silicon FilmsPhysical Review B, 1970
- Photoconductivity Studies of Defects in Silicon: Divacancy-Associated Energy LevelsPhysical Review B, 1968
- Electrons in disordered structuresAdvances in Physics, 1967