Buried heterostructure lasers by silicon implanted, impurity induced disordering
- 2 November 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (18) , 1401-1403
- https://doi.org/10.1063/1.98689
Abstract
Buried heterostructure lasers have been fabricated using impurity induced disordering from an implanted Si diffusion source. The diffused Si extends over 1 μm deep through the active region where the quantum wells are partially homogenized with the barrier and cladding layers to produce a lower refractive index and higher band-gap material. The resulting real refractive index waveguide exhibits single longitudinal and transverse mode behavior to greater than 20 mW for a 4-μm-wide waveguide.Keywords
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