MIS electroluminescent diodes in ZnTe prepared by Al vapor diffusion

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Abstract
Very high-resistivity (1011–1012 Ω cm at 300°K) layers have been obtained by Al vapor diffusion into ZnTe using iodine as a carrier gas under a Zn atmosphere without surface erosion. Avalanching MIS electroluminescent diodes were fabricated using this technique. Spectral outputs of the diodes are yellow at 300°K and green or yellow-green at 77°K. The external quantum efficiencies are 0.1 [inverted lazy s] 0.2% in the yellow, 10% in the green, and 20% in the yellow-green. The yellow and the green electroluminescence appear to be due to an acceptor-donor pair consisting of the doubly ionizable Zn vacancy and an unknown donor, whereas the yellow-green is characteristic of Al-doped ZnTe.