Time Resolved Measurements of Radiative Recombination in GaAs/AIGaAs Heterostructures
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Reduction of the electron density in GaAs-As single heterojunctions by continuous photoexcitationPhysical Review B, 1989
- Optical spectroscopy of two-dimensional electrons in single heterojunctionsPhysical Review B, 1988
- Radiative recombination of a 3D-electron with a 2D-hole in p-type GaAs/(GaAl)As heterojunctionsSolid State Communications, 1987
- New photoluminescence effects of carrier confinement at an AlGaAs/GaAs heterojunction interfaceJournal of Applied Physics, 1985