Hall mobility for electrons in undoped a-Si:H
- 15 October 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (8) , 742-744
- https://doi.org/10.1063/1.92017
Abstract
The Hall mobility μH of electrons in undoped a‐Si:H has been measured between 200 and 550 K under illumination and in the dark. There are two distinct regimes: below Tt =360 K is independent of temperature, with a value μH ∼0.1 cm2 V−1 sec−1; above Tt, μH = 7.9 exp (−0.13 eV/kT) cm2 V−1 sec−1. The data can be fitted by a model where there is one set of conducting states for electrons and two possible modes of transport. Above Tt conduction is by thermally activated hopping; below Tt it takes place either by tunneling or by a temperature‐independent jumping process. Conduction does not take place through extended states in the temperature range 200 – 550 K.Keywords
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